PSMN1R8-30PL Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting see Figure 4
base
Min Typ Max Unit
-
0.3 0.56 K/W
1
Z_th(j-mb)
(K/W)
10^-1
10^-2
δ = 0.5
0.2
0.1
0.05
0.02
10^-3
003aad080
P
δ = ^tp
T
single shot
t_p
t
T
10^-4
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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