PSMN1R8-30PL Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
8
R_DSon
(mΩ)
6
003aad402
4
2
0
2
4
6
8
10
V_GS (V)
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
8
R_DSon
(mΩ)
6
V_GS (V) = 2.8
003aad395
4
3
3.5
2
10
4.5
0
0
20
40
60
80
100
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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