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| PSMN1R8-30PL Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 | |||
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NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 m⦠logic level MOSFET in TO-220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
Min
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10 and 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13 and 12
f = 1 MHz
30
27
1.3
0.5
-
-
-
-
-
-
-
[2] -
-
ID = 25 A; VDS = 15 V; VGS = 10 V;
-
see Figure 14 and 15
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
-
see Figure 14 and 15
-
-
-
-
VDS = 15 V; see Figure 14 and 15
-
VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
see Figure 16
-
-
VDS = 12 V; RL = 0.5 â¦; VGS = 4.5 V;
-
RG(ext) = 4.7 â¦
-
-
-
Typ Max Unit
-
-
V
-
-
V
1.7 2.15 V
-
-
V
-
2.45 V
-
4
µA
-
120 µA
-
100 nA
-
100 nA
1.8 2.3 mâ¦
-
2.4 mâ¦
1.5 1.8 mâ¦
1
-
â¦
170 -
nC
158 -
nC
83
-
nC
29
-
nC
17
-
nC
12
-
nC
22
-
nC
2.6 -
V
10180 -
pF
2000 -
pF
870 -
pF
92
-
ns
160 -
ns
135 -
ns
70
-
ns
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 18 February 2010
© NXP B.V. 2010. All rights reserved.
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