PSMN1R8-30PL Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 30 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 12 V
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Min Typ Max Unit
-
0.8 1.2 V
-
64
-
ns
-
60
-
nC
100
I_D
3
3.5
(A)
003aad394
100
I_D
(A)
80
10
V_GS (V) = 2.8
80
60
60
003aad396
40
2.6
20
2.4
0
0
1
2
3
V_DS (V)
40
20
0
0
T_j = 175 °C
1
2
T_j = 25 °C
3
4
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
18000
C
(pF)
16000
003aad400
C_iss
14000
12000
10000
C_rss
8000
0
3
6
9
12
V_GS (V)
350
g_fs
(S)
300
250
200
150
100
50
0
0
003aad401
20
40
60
80
100
I_D (A)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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