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| PMN35EN Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET | |||
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NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
10
VGS
(V)
8
017aaa288
6
4
2
0
0
2
4
6
8
QG (nC)
ID = 5.1 A; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
6
IS
(A)
4
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig 15. Gate charge waveform definitions
017aaa289
(1)
(2)
2
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 July 2011
© NXP B.V. 2011. All rights reserved.
8 of 15
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