PMN35EN Datasheet, PDF (3/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET

NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
120
P_der
(%)
80
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120
I_der
(%)
80
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40
40
0
−75
−25
25
75
125
175
T_j (°C)
0
−75
−25
25
75
125
175
T_j (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
10²
I_D
(A)
10
Limit R_DSon = V_DS/I_D
1
10^–1
017aaa280
(1)
(2)
(3)
(4)
(5)
(6)
10^–2
10^–1
1
10
10²
V_DS (V)
I_DM = single pulse
(1) t_p = 100 µs
(2) t_p = 1 ms
(3) t_p = 10 ms
(4) t_p = 100 ms
(5) DC; T_sp = 25 °C
(6) DC; T_amb = 25 °C; drain mounting pad 6 cm²
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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