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PMN35EN Datasheet, PDF (5/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET
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NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 150 °C
VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C
VDS = 10 V; ID = 5.1 A; Tj = 25 °C
VDS = 15 V; ID = 5.1 A; VGS = 10 V;
Tj = 25 °C
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 5.1 A
IS = 1.3 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30 -
-
V
1
1.5 2.5 V
-
-
1
µA
-
-
10 µA
-
-
100 nA
-
-
100 nA
-
25
31
mΩ
-
39
48
mΩ
-
32
43
mΩ
-
14
-
S
-
6.2 9.3 nC
-
0.9 -
nC
-
1
-
nC
-
334 -
pF
-
81 -
pF
-
40
-
pF
-
4
-
ns
-
15 -
ns
-
53
-
ns
-
24 -
ns
-
0.75 1.2 V
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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