PMN35EN Datasheet, PDF (6/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET

NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
24
I_D
(A)
10 V
16
6V
4.5 V
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V_GS = 3.5 V
10^–3
I_D
(A)
10^–4
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3.1 V
(1)
(2)
(3)
8
2.9 V
10^–5
2.7 V
2.5 V
0
0
1
2
3
4
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
10^–6
0
1
2
3
V_GS (V)
T_j = 25 °C; V_DS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
100
R_DSon
(1)
(2)
(3)
(mΩ)
80
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(4)
160
R_DSon
(mΩ)
120
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60
40
(5)
(6)
20
(7)
0
2
10
18
26
I_D (A)
T_j = 25 °C
(1) V_GS = 2.7 V
(2) V_GS = 2.9 V
(3) V_GS = 3.1 V
(4) V_GS = 3.8 V
(5) V_GS = 4.5 V
(6) V_GS = 6.0 V
(7) V_GS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
80
40
0
0
2
4
I_D = 3 A
(1) T_j = 150 °C
(2) T_j = 25 °C
(1)
(2)
6
8
10
V_GS (V)
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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