PMN35EN Datasheet, PDF (7/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET

NXP Semiconductors
24
I_D
(A)
16
017aaa286
(2)
(1)
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
1.8
a
1.4
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8
1.0
(1)
(2)
0
0
1
2
3
4
5
V_GS (V)
V_DS > I_D × R_DSon
(1) T_j = 25 °C
(2) T_j = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
–60
0
60
120
180
T_j (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
3
V_GS(th)
(V)
2
017aaa223
(1)
10³
C
(pF)
017aaa287
(1)
(2)
10²
(2)
1
(3)
(3)
0
–60
0
60
120
180
T_j (°C)
I_D = 0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10
10^–1
1
10
10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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