PMN35EN Datasheet, PDF (4/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET

NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1]
-
215 250 K/W
[2]
-
85
100 K/W
-
20
30
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa281
1
10^–3
10^–2
10^–1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10³
017aaa282
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33 _0.25
0.2
0.1
10
0.05
0.02
0
0.01
1
10^–3
10^–2
10^–1
1
FR4 PCB, mounting pad for drain 6 cm²
10
10²
10³
t_p (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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