PMN35EN Datasheet, PDF (2/15 Pages) NXP Semiconductors – 30 V, 5.1 A N-channel Trench MOSFET

NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN35EN
TSOP6
4. Marking
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Table 4. Marking codes
Type number
PMN35EN
5. Limiting values
Marking code
SH
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_amb = 25 °C
[1]
V_GS = 10 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
Min Max Unit
-
30 V
-20 20 V
-
5.1 A
-
3.2 A
-
24 A
-
500 mW
-
1250 mW
-
4170 mW
-55 150 °C
-55 150 °C
-65 150 °C
-
1.3 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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