PHU108NQ03LT Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

Philips Semiconductors
PHB/PHD/PHU108NQ03LT
N-channel TrenchMOS™ logic level FET
80
I_S
(A)
60
03ar65
10⁴
C
(pF)
03ar66
C_iss
40
10³
175 °C
T_j = 25 °C
20
0
0.2
0.4
0.6
0.8
1
1.2
V_SD (V)
10²
10^-1
1
C_oss
C_rss
10
10²
V_DS (V)
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
V_GS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
4000
C
(pF)
3000
03ar67
C_iss
2000
C_rss
1000
0
0
2
4
6
8
10
V_GS (V)
V_DS = 0 V
Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
9397 750 14707
Product data sheet
Rev. 03 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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