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| PHU108NQ03LT Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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Philips Semiconductors
PHB/PHD/PHU108NQ03LT
N-channel TrenchMOS⢠logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
RG
IGSS
RDSon
gate resistance
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
f = 1 MHz
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 6 and 8
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgs1
pre-VGS(th) gate-source charge
Qgs2
post-VGS(th) gate-source charge
Qgd
gate-drain (Miller) charge
Vplat
plateau voltage
Qg(tot)
total gate charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
Ciss
input capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Figure 11 and 12
ID = 0 A; VDS = 0 V; VGS = 4.5 V
VGS = 0 V; VDS = 12 V; f = 1 MHz;
Figure 14
VGS = 0 V; VDS = 0 V; f = 1 MHz
VDS = 12 V; RL = 0.5 â¦; VGS = 4.5 V;
RG = 5.6 â¦
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = â100 A/µs; VGS = 0 V;
VR = 25 V
Min Typ Max Unit
25 -
-
V
22 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.2 V
-
-
1
µA
-
-
500 µA
-
1.2 -
â¦
-
0.02 100 nA
-
6.7 7.5 mâ¦
-
12.1 13.5 mâ¦
-
5.3 6
mâ¦
-
16.3 -
nC
-
4
-
nC
-
2.5 -
nC
-
1.5 -
nC
-
5.6 -
nC
-
2.4 -
V
-
12.5 -
nC
-
1375 -
pF
-
640 -
pF
-
250 -
pF
-
2120 -
pF
-
15 -
ns
-
38 -
ns
-
32 -
ns
-
25 -
ns
-
0.86 1.2 V
-
34 -
ns
-
21 -
nC
9397 750 14707
Product data sheet
Rev. 03 â 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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