PHU108NQ03LT Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

Philips Semiconductors
PHB/PHD/PHU108NQ03LT
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb)
R_th(j-a)
thermal resistance from junction to mounting base Figure 4
thermal resistance from junction to ambient
SOT404
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
SOT428
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
mounted on a printed-circuit
board; vertical in still air;
SOT404 minimum footprint
SOT533
vertical in free air
Min Typ Max Unit
-
-
0.8 K/W
-
50 -
K/W
-
75 -
K/W
-
50 -
K/W
-
70 -
K/W
1
03ar60
Z_th(j-mb)
(K/W)
δ =0.5
0.2
10^{-1 0.1}
0.05
0.02
P
δ = ^tp
T
single pulse
10^-2
10^-5
10^-4
10^-3
10^-2
t_p
t
T
10^-1
1
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
9397 750 14707
Product data sheet
Rev. 03 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 14