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| PHN203 Datasheet, PDF (5/13 Pages) NXP Semiconductors – Dual N-channel enhancement mode TrenchMOS transistor | |||
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NXP Semiconductors
PHN203
Dual N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8
VDS = 24 V; VGS = 0 V; Tj = 25 °C
VDS = 24 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 7 A; Tj = 25 °C;
see Figure 9; see Figure 10
VGS = 4.5 V; ID = 3.5 A; Tj = 25 °C;
see Figure 9; see Figure 10
VGS = 10 V; ID = 7 A; Tj = 150 °C;
see Figure 9; see Figure 10
ID = 7 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 12
VDS = 25 V; RL = 25 â¦; VGS = 10 V;
RG(ext) = 6 â¦; Tj = 25 °C
IS = 1.25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 2 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
27 -
30 -
-
-
-
V
-
V
2.2 V
0.6 -
-
V
1
1.5 2
V
-
-
1
µA
-
-
10 µA
-
10
100 nA
-
10
100 nA
-
24
30
mâ¦
-
30
55
mâ¦
-
40.8 51 mâ¦
-
14.6 -
nC
-
2
-
nC
-
3
-
nC
-
560 -
pF
-
125 -
pF
-
85
-
pF
-
5
-
ns
-
6
-
ns
-
21
-
ns
-
11
-
ns
-
0.75 1
V
-
30
-
ns
PHN203
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 â 27 April 2010
© NXP B.V. 2010. All rights reserved.
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