PHN203 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Dual N-channel enhancement mode TrenchMOS transistor

NXP Semiconductors
PHN203
Dual N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Conditions
mounted on a printed-circuit board;
minimum footprint; see Figure 4
Min Typ Max Unit
-
-
-
K/W
-
-
62.5 K/W
10³
Z_th(j-a)
(K/W)
10²
δ = 0.5
0.2
0.1
10
0.05
0.02
1
single pulse
03an68
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
t_p (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration
PHN203
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 27 April 2010
© NXP B.V. 2010. All rights reserved.
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