SE98A Datasheet, PDF (30/43 Pages) NXP Semiconductors – DDR memory module temp sensor, 1.7 V to 3.6 V

NXP Semiconductors
SE98A
DDR memory module temp sensor, 1.7 V to 3.6 V
Table 26. SMBus DC characteristics
V_DD = 1.7 V to 3.6 V; T_amb = −20 °C to +120 °C; unless otherwise specified. These specifications are guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V_IH
V_IL
V_I(ov)
V_th(POR)H
HIGH-level input voltage
LOW-level input voltage
overvoltage input voltage
HIGH-level power-on reset
threshold voltage
SCL, SDA;
V_DD = 1.7 V to 3.6 V
0.7V_DD -
SCL, SDA;
-
-
V_DD = 1.7 V to 3.6 V
pin A0;
[1] _7.0
-
V_I(ov) − V_DD > 4.8 V
-
-
V_DD + 1 V
0.3V_DD V
10
V
1.7
V
V_th(rec)POR
power-on reset recovery
threshold voltage
for device reset
-
-
0.5
V
I_{OL(sink)EVENT} LOW-level output sink current on
pin EVENT
V_OL = 0.4 V
6
-
-
mA
I_{OL(sink)(SDA)}
LOW-level output sink current on
pin SDA
V_OL = 0.5 V
3
-
-
mA
I_LOH
HIGH-level output leakage current V_OH = V_DD
I_LIH
HIGH-level input leakage current
pins SCL, SDA;
V_I = V_DD or V_SS
I_LIL
LOW-level input leakage current
pins SCL, SDA;
V_I = V_DD or V_SS
C_i
input capacitance
SCL, SDA pins
-
-
−1.0
-
−1.0
-
-
5
1.0
µA
+1.0
µA
+1.0
µA
10
pF
[1] High-voltage input voltage applied to pin A0 during RWP and CRWP operations of the equivalent SPD-included parts. The JEDEC
specification is 7 V (min.) and 10 V (max.). When V_DD is 3.6 V, then V_I(ov) > 4.8 V + V_DD or > 4.8 V + 3.6 V then the minimum voltage is
8.4 V.
350
I_DD(AV)
(µA)
250
V_DD = 3.6 V
3.0 V
2.3 V
1.7 V
150
002aae374
350
I_DD(AV)
(µA)
250
V_DD = 3.6 V
3.0 V
2.3 V
1.7 V
150
002aae375
50
−50 −25 0
25 50 75 100 125
T_amb (°C)
a. I²C-bus inactive
Fig 16. Average supply current
50
−50 −25 0
25 50 75 100 125
T_amb (°C)
b. I²C-bus active
SE98A_2
Product data sheet
Rev. 02 — 6 August 2009
© NXP B.V. 2009. All rights reserved.
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