SE98A Datasheet, PDF (29/43 Pages) NXP Semiconductors – DDR memory module temp sensor, 1.7 V to 3.6 V

NXP Semiconductors
SE98A
DDR memory module temp sensor, 1.7 V to 3.6 V
I_{OL(sink)(SDA)} = SDA output current LOW
I_{OL(sink)EVENT} = EVENT output current LOW
10. Limiting values
Table 24. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DD
V_n
V_A0
I_sink
T_j(max)
T_stg
supply voltage
voltage on any other pin
voltage on pin A0
sink current
maximum junction temperature
storage temperature
SDA, SCL, EVENT pins
overvoltage input; A0 pin
at SDA, SCL, EVENT pins
11. Characteristics
Table 25. Characteristics
V_DD = 1.7 V to 3.6 V; T_amb = −40 °C to +125 °C; unless otherwise specified.
Symbol Parameter
Conditions
T_acc
temperature accuracy
T_res
I_DD(AV)
I_DD(stb)
T_conv
E_f(conv)
temperature resolution
average supply current
standby supply current
conversion period
conversion rate error
B grade temperature accuracy;
V_DD = 1.7 V to 3.6 V
T_amb = 75 °C to 95 °C
T_amb = 40 °C to 125 °C
T_amb = −40 °C to +125 °C
SMBus inactive
percentage error in programmed
data
I_LIL
LOW-level input leakage current pins A0, A1, A2; V_I = V_SS
I_pd
pull-down current
internal; pins A0, A1, A2;
V_I = 0.3V_DD to V_DD
Z_IL
LOW-level input impedance
pins A0, A1, A2; V_I < 0.3V_DD
Z_IH
HIGH-level input impedance
pins A0, A1, A2; V_I ≥ 0.3V_DD
V_DD
supply voltage
Min
Max
Unit
−0.3
+4.2
V
−0.3
+4.2
V
−0.3
+12.5
V
−1
+50.0
mA
-
150
°C
−65
+165
°C
Min
Typ
Max Unit
−1.0
< ±0.5
+1.0 °C
−2.0 < ±1
+2.0 °C
−3.0 < ±2
+3.0 °C
-
0.125
-
°C
-
250
400 µA
-
0.1
5
µA
-
100
120 ms
−30
-
+30 %
−1.0 -
0.05 -
+1.0 µA
4.0
µA
30
-
-
kΩ
800
-
-
kΩ
1.7
1.8 or 2.5 3.6
V
or 3.3
SE98A_2
Product data sheet
Rev. 02 — 6 August 2009
© NXP B.V. 2009. All rights reserved.
29 of 43