DS90C3201_06 Datasheet, PDF (3/20 Pages) National Semiconductor (TI) – 3.3V 8 MHz to 135MHz Dual FPD-LIink Transmitter

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
LVCMOS/LVTTL Input
−0.3V to +4V
Voltage
LVCMOS/LVTTL Output
−0.3V to (V_DD + 0.3V)
Voltage
LVDS Output Voltage
LVDS Short Circuit Duration
−0.3V to (V_DD + 0.3V)
−0.3V to (V_DD + 0.3V)
Continuous
Junction Temperature
+150˚C
Storage Temperature
−65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
+260˚C
Maximum Package Power Dissipation Capacity @ 25˚C
128 TQFP Package:
1.4W
Package Derating:
ESD Rating:
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
25.6mW/˚C above +25˚C
> 2 kV
> 200 V
Recommended Operating
Conditions
Supply Voltage (V_DD)
Operating Free Air
Temperature (T_A)
Supply Noise Voltage (V_P-P)
Transmitter Input Range
Input Clock Frequency (f)
TCLKIN Period (T_CIP)
Min Nom Max Units
3.15 3.3 3.6 V
0 +25 +70 ˚C
±100 mV_P-P
0
V_DD
V
8
135 MHz
7.4
125 ns
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
Min
LVCMOS/LVTTL DC SPECIFICATIONS (Tx inputs, control inputs)
V_IH
High Level Input Voltage
2.0
V_IL
Low Level Input Voltage
0
V_CL
Input Clamp Voltage
I_CL = −18mA
I_IN
Input Current
0V ≤ V_IN ≤ V_DD
V_IN = 0V
−10
LVDS TRANSMITTER DC SPECIFICATIONS
V_OD
Differential Output Voltage
R_L = 100Ω, Register addr 28d/1ch
200
(Programmable register)
bit [5] (TXE) = 0b,
bit [4] (TXO) = 0b (Default)
R_L = 100Ω, Register addr 28d/1ch
100
bit [5] (TXE) = 1b,
bit [4] (TXO) = 1b
∆V_OD
Change in V_OD between
complimentary output states
R_L = 100Ω
V_OS
Offset Voltage (Programmable R_L = 100Ω, Register addr 28d/1ch
1.0
register)
bit [3:2] (TXE) = 00b,
bit [1:0] (TXO) = 00b, (Default)
R_L = 100Ω, Register addr 28d/1ch
0.8
bit [3:2] (TXE) = 01b,
bit [1:0] (TXO) = 01b
R_L = 100Ω, Register addr 28d/1ch
0.6
bit [3:2] (TXE) = 10b,
bit [1:0] (TXO) = 10b
∆V_OS
Change in V_OS between
complimentary output states
I_OS
Output Short Circuit Current
V_OUT = 0V
Typ
−0.8
0
400
250
1.2
1.0
0.8
Max
V_DD
0.8
−1.5
+10
620
Units
V
V
V
µA
µA
mV
400
mV
50
mV
1.5
V
1.2
V
1.0
V
50
mV
−50
mA
3
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