COP888FH Datasheet, PDF (10/49 Pages) National Semiconductor (TI) – 8-Bit CMOS ROM Based Microcontrollers with 12k Memory, Comparators, USART and Hardware Multiply/Divide

COP68xFH
Absolute Maximum Ratings (Note 14)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_CC)
Voltage at Any Pin
7V
−0.3V to V_CC + 0.3V
Total Current into V_CC Pin (Source)
Total Current out of GND Pin (Sink)
100 mA
110 mA
Storage Temperature Range
−65˚C to +140˚C
Note 14: Note: Absolute maximum ratings indicate limits beyond which dam-
age to the device may occur. DC and AC electrical specifications are not en-
sured when operating the device at absolute maximum ratings.
DC Electrical Characteristics COP68xFH:
−55˚C ≤ T_A ≤ +125˚C unless otherwise specified
Parameter
Conditions
Operating Voltage
Power Supply Ripple (Note 15)
Peak-to-Peak
Supply Current (Note 16)
CKI = 10 MHz
CKI = 4 MHz
HALT Current (Note 17)
IDLE Current
V_CC = 5.5V, t_c = 1 µs
V_CC = 5.5V, t_c = 2.5 µs
V_CC = 5.5V, CKI = 0 MHz
CKI = 10 MHz
CKI = 4 MHz
Input Levels
V_CC = 5.5V, t_c = 1 µs
V_CC = 5.5V, t_c = 2.5 µs
RESET
Logic High
Logic Low
CKI (All Other Inputs)
Logic High
Logic Low
Hi-Z Input Leakage
Input Pullup Current
G and L Port Input Hysteresis
V_CC = 5.5V, V_IN = 0V
V_CC = 5.5V, V_IN = 0V
(Note 19)
Output Current Levels
D Outputs
Source
Sink
All Others
V_CC = 4.5V, V_OH = 3.3V
V_CC = 4.5V, V_OL = 1V
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode)
TRI-STATE Leakage
Allowable Sink/Source
V_CC = 4.5V, V_OH = 2.7V
V_CC = 4.5V, V_OH = 3.3V
V_CC = 4.5V, V_OL = 0.4V
V_CC = 5.5V
Current per Pin
D Outputs (Sink)
All others
Maximum Input Current
Room Temp
without Latchup (Notes 18, 19)
RAM Retention Voltage, V_r
500 ns Rise
and Fall Time (Min)
Input Capacitance
(Note 19)
Load Capacitance on D2
(Note 19)
Min
Typ
Max
Units
4.5
5.5
V
0.1 V_CC
V
12.5
mA
5.5
mA
<10
30
µA
3.5
mA
2.5
mA
0.8 V_CC
0.7 V_CC
−5
−35
−0.4
9
−9
−0.4
1.4
−5
V
0.2 V_CC
V
V
0.2 V_CC
V
+5
µA
−400
µA
0.35 V_CC
V
mA
mA
−140
µA
mA
mA
+5
µA
12
mA
2.5
mA
±100
mA
2
V
7
pF
1000
pF
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