M5M410092BRF Datasheet, PDF (161/204 Pages) Mitsubishi Electric Semiconductor – 3D-RAM (M5M410092B)

MITSUBISHI
ELECTRONIC DEVICE GROUP
Rev. 1.03
3D-RAM (M5M410092B)
t_SCLKH
t_SCLK
t_SCLKL
SCAN_TCK
Controller
State
Test-Logic Reset
Note 1 ^tSCNTS
SCAN_TMS
SCAN_TDI
SCAN_TDO
Run-Test-Idle
t_SCNTH
Shift-IR
Shift-IR
t_SCNIS
t_SQ
t_SLZ
Figure 8.17 Boundary scan
Exit-IR
Update-IR
t_SCNIH
t_SHZ
t_SVD
M1004
Table 8.12 Boundary-Scan timing parameters
Symbol
Parameter
t_SCLK
t_SCLKH
t_SCLKL
t_SCNTS
t_SCNTH
t_SCNIS
t_SCNIH
t_SLZ
t_SQ
t_SVD
t_SHZ
SCAN_TCK cycle time
SCAN_TCK high pulse width
SCAN_TCK low pulse width
SCAN_TMS setup time
SCAN_TMS hold time
SCAN_TDI setup time
SCAN_TDI hold time
SCAN_TCK to SCAN_TDO low impedance
SCAN_TDO access time
SCAN_TDO data valid time
SCAN_TCK to SCAN_TDO high impedance
M5M410092B
-10A, -10, -12
Min Max
100
—
40
—
40
—
8
—
26
—
8
—
26
—
—
20
—
26
8
—
—
20
Unit Refer
ns
t₁
ns
t₂
ns
t₃
ns
t₈
ns
t₉
ns
t₈
ns
t₉
ns t₁₈
ns t₁₉
ns t₂₀
ns t₂₁
135