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M5M410092BRF Datasheet, PDF (139/204 Pages) Mitsubishi Electric Semiconductor – 3D-RAM (M5M410092B)
MITSUBISHI
ELECTRONIC DEVICE GROUP
Rev. 1.03
3D-RAM (M5M410092B)
Boundary-Scan Timing Parameters
Table 7.8 Boundary-Scan timing parameters
Symbol
Parameter
tSCLK
tSCLKH
tSCLKL
tSCNTS
tSCNTH
tSCNIS
tSCNIH
tSLZ
tSQ
tSVD
tSHZ
tSCNRS
tSCNRP
SCAN_TCK cycle time
SCAN_TCK high pulse width
SCAN_TCK low pulse width
SCAN_TMS setup time
SCAN_TMS hold time
SCAN_TDI setup time
SCAN_TDI hold time
SCAN_TCK to SCAN_TDO low impedance
SCAN_TDO access time
SCAN_TDO data valid time
SCAN_TCK to SCAN_TDO high impedance
SCAN_RST setup time
SCAN_RST pulse width
M5M410092B
-10A, -10, -12
Min Max
100
—
40
—
40
—
8
—
26
—
8
—
26
—
—
20
—
26
8
—
—
20
8
—
30
—
Unit Refer
ns
t1
ns
t2
ns
t3
ns
t8
ns
t9
ns
t8
ns
t9
ns t18
ns t19
ns t20
ns t21
ns
t6
ns
t7
Ch. 8
Figure
17
17
17
17
17
17
17
17
17
17
17
18
18
115