MT29F8G08ADADAH4D Datasheet, PDF (95/132 Pages) Micron Technology – 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
OTP DATA READ (00h-30h)
To read data from the OTP area, set the device to OTP operation mode, then issue the
PAGE READ (00h-30h) command. Data can be read from OTP pages within the OTP area
whether the area is protected or not.
To use the PAGE READ command for reading data from the OTP area, issue the 00h
command, and then issue five address cycles: for the first two cycles, the column ad-
dress; and for the remaining address cycles, select a page in the range of 02h-00h-00h
through 1Fh-00h-00h. Lastly, issue the 30h command. The PAGE READ CACHE MODE
command is not supported on OTP pages.
R/B# goes LOW (^tR) while the data is moved from the OTP page to the data register. The
READ STATUS (70h) command is the only valid command for reading status in OTP op-
eration mode. Bit 5 of the status register reflects the state of R/B# (see Status Opera-
tions).
Normal READ operation timings apply to OTP read accesses. Additional pages within
the OTP area can be selected by repeating the OTP DATA READ command.
The PAGE READ command is compatible with the RANDOM DATA OUTPUT (05h-E0h)
command.
Only data on the current page can be read. Pulsing RE# outputs data sequentially.
Figure 68: OTP DATA READ
CLE
CE#
WE#
ALE
RE#
I/Ox
R/B#
t_R
00h
Col
add 1
Col
add 2
pOagTeP¹
00h
00h
OTP address
30h
Busy
D_OnUT
Dn_O+U1T
Note: 1. The OTP page must be within the 02h–1Fh range.
D_OmUT
Don’t Care
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
95
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