MT29F8G08ADADAH4D Datasheet, PDF (91/132 Pages) Micron Technology – 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
OTP DATA PROGRAM (80h-10h)
The OTP DATA PROGRAM (80h-10h) command is used to write data to the pages within
the OTP area. An entire page can be programmed at one time, or a page can be partially
programmed up to eight times. Only the OTP area allows up to eight partial-page pro-
grams. The rest of the blocks support only four partial-page programs. There is no
ERASE operation for OTP pages.
PROGRAM PAGE enables programming into an offset of an OTP page using two bytes of
the column address (CA[12:0]). The command is compatible with the RANDOM DATA
INPUT (85h) command. The PROGRAM PAGE command will not execute if the OTP
area has been protected.
To use the PROGRAM PAGE command, issue the 80h command. Issue n address cycles.
The first two address cycles are the column address. For the remaining cycles, select a
page in the range of 02h-00h through 1Fh-00h. Next, write from 1–2112 bytes of data.
After data input is complete, issue the 10h command. The internal control logic auto-
matically executes the proper programming algorithm and controls the necessary tim-
ing for programming and verification.
R/B# goes LOW for the duration of the array programming time (^tPROG). The READ
STATUS (70h) command is the only valid command for reading status in OTP operation
mode. Bit 5 of the status register reflects the state of R/B#. When the device is ready,
read bit 0 of the status register to determine whether the operation passed or failed (see
Status Operations). Each OTP page can be programmed to 8 partial-page programming.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
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