MT29F8G08ADADAH4D Datasheet, PDF (33/132 Pages) Micron Technology – 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Command Definitions
Table 8: Two-Plane Command Set
Note 4 applies to all parameters and conditions
Number of
Com-
Valid
mand
Address
Command
Cycle #1 Cycles
READ PAGE TWO-
00h
5
PLANE
READ FOR TWO-
00h
5
PLANE INTERNAL
DATA MOVE
RANDOM DATA
06h
5
READ TWO-PLANE
PROGRAM PAGE
80h
5
TWO-PLANE
PROGRAM PAGE
80h
5
CACHE MODE TWO-
PLANE
PROGRAM FOR
85h
5
TWO-PLANE INTER-
NAL DATA MOVE
BLOCK ERASE TWO-
60h
3
PLANE
Com-
mand
Cycle #2
00h
00h
E0h
11h-80h
11h-80h
11h-85h
D1h-60h
Number of
Valid
Address
Cycles
5
5
–
5
5
5
3
Com-
mand
Cycle #3
30h
Valid While Valid While
Selected Other LUNs
LUN is Busy are Busy Notes
No
Yes
35h
No
Yes
1
–
No
10h
No
15h
No
Yes
2
Yes
Yes
10h
No
Yes
1
D0h
No
Yes
3
Notes:
1. Do not cross plane boundaries when using READ FOR INTERNAL DATA MOVE TWO-
PLANE or PROGRAM FOR TWO-PLANE INTERNAL DATA MOVE.
2. The RANDOM DATA READ TWO-PLANE command is limited to use with the PAGE READ
TWO-PLANE command.
3. D1h command can be omitted.
4. These commands supported only with ECC disabled.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
33
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