MT16LSDF6464HY-133D2 Datasheet, PDF (9/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE

Table 7: Burst Definition Table
STARTING
BURST COLUMN
LENGTH ADDRESS
ORDER OF ACCESSES
WITHIN A BURST
TYPE =
TYPE =
SEQUENTIAL INTERLEAVED
2
4
8
Full
Page
(y)
A0
0
0-1
1
1-0
A1 A0
00
0-1-2-3
01
1-2-3-0
10
2-3-0-1
11
3-0-1-2
A2 A1 A0
0 0 0 0-1-2-3-4-5-6-7
0 0 1 1-2-3-4-5-6-7-0
0 1 0 2-3-4-5-6-7-0-1
0 1 1 3-4-5-6-7-0-1-2
1 0 0 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4
1 1 0 6-7-0-1-2-3-4-5
1 1 1 7-0-1-2-3-4-5-6
n = A0-A9 Cn, Cn + 1, Cn + 2
(location Cn + 3, Cn + 4...
0-y)
…Cn - 1, Cn…
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Not supported
NOTE:
1. For full-page accesses: y = 1,024 (both 256MB and
512MB modules)
2. For a burst length of two, A1–A9 select the block-of-
two burst; A0 selects the starting column within the
block.
3. For a burst length of four, A2–A9 select the block-of-
four burst; A0–A1 select the starting column within the
block.
4. For a burst length of eight, A3–A9 select the block-of-
eight burst; A0–A2 select the starting column within
the block.
5. For a full-page burst, the full row is selected and A0–A9
select the starting column.
6. Whenever a boundary of the block is reached within a
given sequence above, the following access wraps
within the block.
7. For a burst length of one, A0–A9 select the unique col-
umn to be accessed, and mode register bit M3 is
ignored.
CLK
COMMAND
DQ
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Figure 5: CL Diagram
T0
T1
T2
T3
READ
NOP
tLZ
tAC
CAS Latency = 2
NOP
tOH
DOUT
CLK
COMMAND
T0
READ
DQ
T1
T2
NOP
NOP
tLZ
tAC
CAS Latency = 3
T3
T4
NOP
tOH
DOUT
DON’T CARE
UNDEFINED
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type, and the
starting column address, as shown in Table 7.
CAS Latency (CL)
CL is the delay, in clock cycles, between the registra-
tion of a READ command and the availability of the
first piece of output data. The latency can be set to two
or three clocks.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available
by clock edge n + m. The DQ will start driving as a
result of the clock edge one cycle earlier (n + m - 1),
and provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example,
assuming that the clock cycle time is such that all rele-
vant access times are met, if a READ command is regis-
tered at T0 and the latency is programmed to two
clocks, the DQ will start driving after T1 and the data
will be valid by T2, as shown in Figure 4 on page 8.
Table 8 on page 10 indicates the operating frequencies
at which each CL setting can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may
result.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
9
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