MT16LSDF6464HY-133D2 Datasheet, PDF (21/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE

256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; VDD = +3.3V ±0.3V
BYTE
DESCRIPTION
ENTRY (VERSION) MT16LSDF3264H MT16LSDF6464H
31 Module rank density
32 _{Command and address setup time,} ^t_AS, ^t_CMS
33 _{Command and address hold time,} ^t_AH, ^t_CMH
34 _{Data signal input setup time,} ^t_DS
35 _{Data signal input hold time,} ^t_DH
36–40 Reserved
41 Device MIN ACTIVE/AUTO-REFRESH time, ^tRC
42–61 Reserved
62 SPD revision
63 Checksum for bytes 0-62
64 Manufacturer’s JEDEC ID code
65–71 Manufacturer’s JEDEC ID code (continued)
72 Manufacturing location
73–90 Module part number (ASCII)
91 PCB identification code
92 Identification code (continued)
93 Year of manufacture in BCD
94 Week of manufacture in BCD
95-98 Module serial number
99–125 Manufacturer-specific data (RSVD)
126 System frequency
127 SDRAM component and clock detail
128MB or 256MB
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
66ns (-13E)
71ns (-133)
66ns (-10E)
REV. 2.0
(-13E)
(-133)
(-10E)
MICRON
1–12
1–9
0
100 MHz/133 MHz
(-13E/-133/-10E)
20
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
95
E1
2D
2C
FF
01–0C
Variable Data
01–09
00
Variable Data
Variable Data
Variable Data
64
CF
40
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
B8
04
50
2C
FF
01– 0C
Variable Data
01–09
00
Variable Data
Variable Data
Variable Data
64
CF
NOTE:
1. The value of ^tRAS used for the -13E module is calculated from ^tRC - ^tRP. Actual device spec value is 37ns.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
21
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©2006 Micron Technology, Inc. All rights reserved.