MT16LSDF6464HY-133D2 Datasheet, PDF (13/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE

256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Table 12: IDD Specifications and Conditions – 512MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION
SYMBOL -13E -133 -10E UNITS
NOTES
Operating current: Active mode; Burst = 2; READ or WRITE;
t_{RC =} t_{RC (MIN)}
IDD1^a
1,096 1,016 1,016 mA
3, 17,19, 32
Standby current: Power-down mode; All device banks idle;
IDD2^b
32 32 32 mA
32
CKE = LOW
STANDBY CURRENT: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after ^tRCD
met; No accesses in progress
IDD3^a
336 336 336 mA 3, 12, 19, 32
OPERATING CURRENT: Burst mode; Continuous burst; READ
or WRITE; All device banks active
Auto refresh current
t_{RFC =} t_{RFC (MIN)}
CKE = HIGH; S# = HIGH
t_{RFC = 7.8125µs}
IDD4^a
IDD5^b
IDD6^b
1,096 1,096 1,096 mA
4,560 4,320 4,320 mA
56 56 56 mA
3, 18, 19, 32
3, 12, 18, 19,
32,30
Self refresh current: CKE < 0.2V
Standard
IDD7^b
40 40 40 mA
4
Low power (L)
IDD7^b
24 24 24 mA
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
Table 13: Capacitance
Note 2; notes appear on page 16
PARAMETER
Input capacitance: Address and command
Input capacitance: CK
Input capacitance: CKE, S#
Input capacitance: DQMB
Input/output capacitance: DQ
SYMBOL
CI1
CI2
CI3
CI4
CIO
MIN
40
20
20
5
8
MAX
60.8
28
30.4
7.6
12
UNITS
pF
pF
pF
pF
pF
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
13
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