MT16LSDF6464HY-133D2 Datasheet, PDF (12/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE

Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Voltage on VDD Supply,
Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS . . . . . . . . . . . . . . . . . . . -1V to +4.6V
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Operating Temperature,
T_OPR (Commercial - ambient) . . . . . .0°C to +65°C
Storage Temperature (plastic) . . . . . . -55°C to +125°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
Output leakage current: DQ pins are disabled;
0V ≤ VOUT ≤ VDDQ
Output levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
Command and
Address Inputs
CK, CKE, S#
DQMB
DQ
SYMBOL
VDD, VDDQ
VIH
VIL
II
IOZ
VOH
VOL
MIN
3
2
–0.3
–80
–40
–10
–10
2.4
–
MAX
3.6
VDD + 0.3
0.8
80
40
10
10
UNITS
V
V
V
µA
µA
NOTES
22
22
33
33
–
V
0.4
V
Table 11: IDD Specifications and Conditions – 256MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION
SYMBOL -13E -133 -10E UNITS
NOTES
Operating current: Active mode; Burst = 2; READ or WRITE;
t_{RC =} t_{RC (MIN)}
IDD1^a
1,296 1,216 1,136 mA 3, 17, 19, 32
Standby current: Power-down mode; All device banks idle;
IDD2^b
32 32 32 mA
32
CKE = LOW
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after ^tRCD
met; No accesses in progress
IDD3^a
416 416 336 mA 3, 12, 19, 32
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
IDD4^a
1,336 1,216 1,136 mA
3, 18, 19, 32
Auto refresh current
CKE = HIGH; S# = HIGH
t_{RFC =} t_{RFC (MIN)}
t_{RFC = 15.625µs}
IDD5^b
IDD6^b
5,280 4,960 4,320 mA
48 48 48 mA
3, 12, 18, 19,
32,30
Self refresh current: CKE ≤ 0.2V
Standard
IDD7^b
32 32 32 mA
4
Low power (L)
IDD7^b
16 16 16 mA
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.