MT16LSDF6464HY-133D2 Datasheet, PDF (8/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE

Mode register bits M0–M2 specify the burst length,
M3 specifies the type of burst (sequential or inter-
leaved), M4–M6 specify the CL, M7 and M8 specify the
operating mode, M9 specifies the write burst mode,
and M10 and M11 are reserved for future use. For the
256MB and 512MB, M12 (A12) is undefined, but
should be driven LOW during loading of the mode reg-
ister.
The mode register must be loaded when all device
banks are idle, and the controller must wait the speci-
fied time before initiating the subsequent operation.
Violating either of these requirements will result in
unspecified operation.
Burst Length
Read and write accesses to the SDRAM are burst ori-
ented, with the burst length being programmable, as
shown in Figure 4. The burst length determines the
maximum number of column locations that can be
accessed for a given READ or WRITE command. Burst
lengths of 1, 2, 4, or 8 locations are available for both
the sequential and the interleaved burst types, and a
full-page burst is available for the sequential type. The
full-page burst is used in conjunction with the BURST
TERMINATE command to generate arbitrary burst
lengths.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached, as shown in Table 7 on
page 9. The block is uniquely selected by A1–A9 when
the burst length is set to two; by A2–A9 when the burst
length is set to four; and by A3–A9 when the burst
length is set to eight. The remaining (least significant)
address bit(s) is (are) used to select the starting loca-
tion within the block. Full-page bursts wrap within the
page if the boundary is reached, as shown in Table 7 on
page 9.
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Figure 4: Mode Register Definition
Diagram
256MB Module
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus
11 10 9 8 7 6 5 4 3 2 1 0
Reserved* WB Op Mode CAS Latency BT Burst Length
*Should program
M11 and M10 = “0, 0”
to ensure compatibility
with future devices.
Mode Register (Mx)
512MB Module
A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus
12 11 10 9 8 7 6 5 4 3 2 1 0 _{Mode Register (Mx)}
Reserved* WB Op Mode CAS Latency BT Burst Length
*Should program
M12, M11, and
M10 = “0, 0, 0”
to ensure
compatibility with
future devices.
Burst Length
M2 M1 M0 M3 = 0
0 00
1
0 01
2
0 10
4
0 11
8
1 0 0 Reserved
1 0 1 Reserved
1 1 0 Reserved
1 1 1 Full Page
M3 = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
M3
Burst Type
0
Sequential
1
Interleaved
M6 M5 M4
00 0
00 1
01 0
01 1
10 0
10 1
11 0
11 1
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
M8 M7 M6-M0 Operating Mode
0
0 Defined Standard operation
-
-
-
All other states reserved
M9
Write Burst Mode
0
Programmed burst length
1
Single location access
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
8
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