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MT16LSDF6464HY-133D2 Datasheet, PDF (14/22 Pages) Micron Technology – SMALL-OUTLINE SDRAM MODULE
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256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Table 14: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device
AC CHARACTERISTICS
PARAMETER
Access time from
CLK (positive edge)
CL = 3
CL = 2
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CL = 3
CL = 2
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold
time
CS#, RAS#, CAS#, WE#, DQM setup
time
Data-in hold time
Data-in setup time
Data-out High-Z time
CL = 3
CL = 2
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE
command
SYMBOL
tAC(3)
tAC(2)
tAH
tAS
tCH
tCL
tCK(3)
tCK(2)
tCKH
tCKS
tCMH
-13E
MIN
0.8
1.5
2.5
2.5
7
7.5
0.8
1.5
0.8
MAX
5.4
5.4
-133
MIN
0.8
1.5
2.5
2.5
7.5
10
0.8
1.5
0.8
MAX
5.4
6
-10E
MIN
1
2
3
3
8
10
1
2
1
MAX
6
6
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCMS
1.5
1.5
2
ns
tDH
tDS
tHZ(3)
tHZ(2)
tLZ
tOH
tOHN
tRAS
tRC
tRCD
tREF
tRFC
tRP
tRRD
0.8
0.8
1
ns
1.5
1.5
2
ns
5.4
5.4
6
ns
5.4
6
6
ns
1
1
1
ns
3
3
3
ns
1.8
1.8
1.8
ns
37 120,000 44 120,000 50 120,000 ns
60
66
70
ns
15
20
20
ns
64
64
64
ms
66
66
70
ns
15
20
20
ns
14
15
20
ns
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
tWR
1 CLK
1 CLK +
1 CLK
ns
+ 7ns
7.5ns
+ 7ns
14
15
15
ns
tXSR
67
75
80
ns
NOTES
27
23
23
10
10
28
32
7
24
25
20
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
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