MT46V64M8P-5BF Datasheet, PDF (52/93 Pages) Micron Technology – 512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features

512Mb: x4, x8, x16 DDR SDRAM
Commands
WRITE
The WRITE command is used to initiate a burst write access to an active row as shown in
Figure 20. The value on the BA0, BA1 inputs selects the bank, and the address provided
on inputs A[i:0] (where Ai is the most significant column address bit for a given density
and configuration, see Table 2 on page 2) selects the starting column location.
Figure 20: WRITE Command
CK#
CK
CKE HIGH
CS#
RAS#
CAS#
WE#
Address
Col
EN AP
A10
DIS AP
BA0, BA1
Bank
Note:
Don’t Care
EN AP = enable auto precharge; and DIS AP = disable auto precharge.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. Q; Core DDR Rev. E 7/11 EN
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