MT46V64M8P-5BF Datasheet, PDF (36/93 Pages) Micron Technology – 512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features

512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
Table 25:
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, and 34 apply to the entire table; Notes appear on page 37;
0°C d T_A d 70°C; V_DDQ = 2.5V ±0.2V, V_DD = 2.5V ±0.2V
AC Characteristics
-75
Parameter
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Symbol
t_WTR
t_XSNR
t_XSRD
n/a
Min
Max
1
–
75
–
200
–
t_{QH -} t_DQSQ
Units
t_CK
ns
t_CK
ns
Notes
26
Table 26:
Speed
-75Z/-75E
-75Z/-75E
-75Z/-75E
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 37;
0°C d T_A d 70°C; V_DDQ = 2.5V ±0.2V, V_DD = 2.5V ±0.2V
Slew Rate
t_IS
t_IH
0.500 V/ns
1.00
1
0.400 V/ns
1.05
1
0.300 V/ns
1.10
1
Units
ns
ns
ns
Table 27:
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 37;
0°C d T_A d 70°C; V_DDQ = 2.5V ±0.2V, V_DD = 2.5V ±0.2V
Speed
Slew Rate
t_DS
t_DH
-75Z/-75E
-75Z/-75E
-75Z/-75E
0.500 V/ns
0.50
0.50
0.400 V/ns
0.55
0.55
0.300 V/ns
0.60
0.60
Units
ns
ns
ns
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. Q; Core DDR Rev. E 7/11 EN
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