MT40A1G4RH-075E Datasheet, PDF (354/365 Pages) Micron Technology – Programmable data strobe preambles

Table 158: Electrical Characteristics and AC Timing Parameters (Continued)
Parameter
DQS_t, DQS_c differential READ pream-
ble for 1^tCKpreamble
DQS_t, DQS_c differential READ pream-
ble for 2^tCKpreamble
DQS_t, DQS_c differential READ postam-
ble
DLL locking time
CMD, ADDR setup time Base
to CK_t, CK_c refer-
enced to V_IH(AC) and
VIL(AC) ^levels
V_REFCA
CMD, ADDR hold time Base
to CK_t, CK_c refer-
enced to V_IH(DC) and
VIL(DC) ^levels
V_REFCA
CTRL, ADDR pulse width for each input
ACTIVATE to internal READ or WRITE de-
lay
PRECHARGE command period
ACTIVATE-to-PRECHARGE command peri-
od
ACTIVATE-to-ACTIVATE or REF command
period
ACTIVATE-to-ACTIVATE command period
to different bank groups for 1/2KB page
size
ACTIVATE-to-ACTIVATE command period
to different bank groups for 1KB page
size
ACTIVATE-to-ACTIVATE command period
to different bank groups for 2KB page
size
Symbol
t_RPRE1ck
t_RPRE2ck
t_RPST
DDR4-2666
Min Max
0.9
–
DDR4-2933
Min Max
0.9
–
DDR4-3200
Min Max
0.9
–
Reserved
Min Max
1.8
–
1.8
–
1.8
–
0.33
–
0.33
–
0.33
–
Command and Address Timing
t_DLLK
854
–
940
–
1024
–
t_IS
55
–
48
–
40
–
t_ISVREF
145
–
138
–
130
–
t_IH
t_IHVREF
80
–
73
–
65
–
145
–
138
–
130
–
t_IPW
t_RCD
t_RP
t_RAS
t_RC
t_{RRD_S}
(1/2KB)
t_{RRD_S}
(1KB)
t_{RRD_S}
(2KB)
385
–
365
–
350
–
See Speed Bin Tables for ^tRCD
See Speed Bin Tables for ^tRP
See Speed Bin Tables for ^tRAS
See Speed Bin Tables for ^tRC
MIN = greater MIN = greater MIN = greater
of 4CK or 3.0ns of 4CK or 2.7ns of 4CK or 2.5ns
MIN = greater MIN = greater MIN = greater
of 4CK or 3.0ns of 4CK or 2.7ns of 4CK or 2.5ns
MIN = greater MIN = greater MIN = greater
of 4CK or 5.3ns of 4CK or 5.3ns of 4CK or 5.3ns
Unit
CK
CK
CK
CK
ps
ps
ps
ps
ps
ns
ns
ns
ns
CK
CK
CK
Notes
21
21
22
2, 3
13
13
1
1
1