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| MT40A1G4RH-075E Datasheet, PDF (288/365 Pages) Micron Technology – Programmable data strobe preambles | |||
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4Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics â AC and DC Output Measurement
Levels
Data, Strobe, and Mask Overshoot and Undershoot Specifications
Table 112: Data, Strobe, and Mask Overshoot and Undershoot/ Specifications
Description
DDR4- DDR4- DDR4- DDR4- DDR4- DDR4- DDR4-
1600 1866 2133 2400 2666 2933 3200
DQS_t, DQS_n, DQSL_t, DQSL_n, DQSU_t, DQSU_n, DQ[0:15], DM/DBI, UDM/UDBI, LDM/LDBI,
Area A: Maximum peak amplitude above VDDQ
0.16
0.16 0.16
0.16 0.16 0.16
0.16
absolute MAX
Area B: Amplitude allowed between VDDQ and
VDDQ absolute MAX
Area C: Maximum peak amplitude allowed for
undershoot below VSSQ
Area D: Maximum peak amplitude below VSSQ
absolute MIN
0.24 0.24 0.24 0.24 0.24 0.24 0.24
0.30 0.30 0.30 0.30 0.30 0.30 0.30
0.10 0.10 0.10 0.10 0.10 0.10 0.10
Area A maximum overshoot area per 1UI
0.0150 0.0129 0.0113 0.0100 0.0129 0.0113 0.0100
Area B maximum overshoot area per 1UI
0.1050 0.0900 0.0788 0.0700 0.0900 0.0788 0.0700
Area C maximum undershoot area per 1UI
0.1050 0.0900 0.0788 0.0700 0.0900 0.0788 0.0700
Area D maximum undershoot area per 1UI
0.0150 0.0129 0.0113 0.0100 0.0129 0.0113 0.0100
Unit
V
V
V
V
V/ns
V/ns
V/ns
V/ns
Figure 227: Data, Strobe, and Mask Overshoot and Undershoot Definition
Absolute MAX overshoot
A
VDDQ absolute MAX
B
VDDQ
1UI
VSSQ
C
VSSQ absolute MIN
D
Absolute MAX undershoot
Overshoot area above VDDQ absolute MAX
Overshoot area below VDDQ absolute MAX
and above VDDQ MAX
Undershoot area below VSSQ MIN and
above VSSQ absolute MIN
Undershoot area below VSSQ absolute MIN
Electrical Characteristics â AC and DC Output Measurement Levels
Single-Ended Outputs
Table 113: Single-Ended Output Levels
Parameter
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output slew rate)
Symbol
VOH(DC)
VOM(DC)
VOL(DC)
VOH(AC)
DDR4-1600 to DDR4-3200
1.1 Ã VDDQ
0.8 Ã VDDQ
0.5 Ã VDDQ
(0.7 + 0.15) Ã VDDQ
Unit
V
V
V
V
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
288
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2014 Micron Technology, Inc. All rights reserved.
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