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MT40A1G8WE-083EAAT Datasheet, PDF (286/358 Pages) Micron Technology – Automotive DDR4 SDRAM
8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – AC and DC Output Measurement
Levels
Table 116: Differential Output Levels (Continued)
Parameter
AC differential output low measurement level (for output slew
rate)
Symbol
VOL,diff(AC)
DDR4-1600 to DDR4-3200
–0.3 × VDDQ
Unit
V
Note: 1. The swing of ±0.3 × VDDQ is based on approximately 50% of the static single-ended out-
put peak-to-peak swing with a driver impedance of RZQ/7 and an effective test load of
50Ω to VTT = VDDQ at each differential output.
Using the same reference load used for timing measurements, output slew rate for fall-
ing and rising edges is defined and measured between VOL,diff(AC) and VOH,diff(AC) for dif-
ferential signals.
Table 117: Differential Output Slew Rate Definition
Description
Differential output slew rate for rising edge
Differential output slew rate for falling edge
Measured
From
To
VOL,diff(AC)
VOH,diff(AC)
VOH,diff(AC)
VOL,diff(AC)
Figure 226: Differential Output Slew Rate Definition
TRdiff
Defined by
[VOH,diff(AC) - VOL,diff(AC)ΔTRdiff
[VOH,diff(AC) - VOL,diff(AC)ΔTFdiff
VOH,diff(AC)
TFdiff
VOL,diff(AC)
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
286
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