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MT40A1G8WE-083EAAT Datasheet, PDF (265/358 Pages) Micron Technology – Automotive DDR4 SDRAM | |||
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8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics â AC and DC Single-Ended Input
Measurement Levels
Figure 206: DQ Slew Rate Definitions
tr2
Rx Mask
tr1
tf1
Rx Mask
0.5 Ã VdiVW,max
VCENTDQ,midpoint
0.5 Ã VdiVW,max
0.5 Ã VdiVW,max
VCENTDQ,midpoint
0.5 Ã VdiVW,max
tf2
Notes:
1. Rising edge slew rate equation srr1 = VdiVW,max/(tr1).
2. Rising edge slew rate equation srr2 = (VIHL(AC)min - VdiVW,max )/(2 Ã tr2).
3. Falling edge slew rate equation srf1 = VdiVW,max/(tf1).
4. Falling edge slew rate equation srf2 = (VIHL(AC)min - VdiVW,max )/(2 Ã tf2).
Table 91: DQ Input Receiver Specifications
Note 1 applies to the entire table
DDR4-1600,
1866, 2133
Parameter
Symbol Min Max
VIN Rx mask input VdiVW
â
136
peak-to-peak
DQ Rx input tim- TdiVW â
0.2
ing window
DQ AC input
VIHL(AC) 186
â
swing peak-to-
peak
DDR4-2400
Min Max
â
130
â
0.2
160
â
DDR4-2666
Min Max
â
120
â 0.22
150
â
DDR4-2933
Min Max
â
115
â 0.23
145
â
DDR4-3200
Min Max
â
110
Not
Unit es
mV 2, 3
â 0.23 UI 2, 3
140
â mV 4, 5
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
265
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
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