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MT40A512M8RH-075E Datasheet, PDF (117/365 Pages) Micron Technology – DDR4 SDRAM
4Gb: x4, x8, x16 DDR4 SDRAM
VREFDQ Calibration
VREFDQ Calibration
The VREFDQ level, which is used by the DRAM DQ input receivers, is internally gener-
ated. The DRAM V REFDQ does not have a default value upon power-up and must be set
to the desired value, usually via VREFDQ calibration mode. If PDA or PPR modes (hPPR or
sPPR) are used prior to VREFDQ calibration, VREFDQ should initially be set at the midpoint
between the VDD,max, and the LOW as determined by the driver and ODT termination
selected with wide voltage swing on the input levels and setup and hold times of ap-
proximately 0.75UI. The memory controller is responsible for V REFDQ calibration to de-
termine the best internal VREFDQ level. The V REFDQ calibration is enabled/disabled via
MR6[7], MR6[6] selects Range 1 (60% to 92.5% of VDDQ) or Range 2 (45% to 77.5% of
VDDQ), and an MRS protocol using MR6[5:0] to adjust the VREFDQ level up and down.
MR6[6:0] bits can be altered using the MRS command if MR6[7] is disabled. The DRAM
controller will likely use a series of writes and reads in conjunction with VREFDQ adjust-
ments to obtain the best VREFDQ, which in turn optimizes the data eye.
The internal VREFDQ specification parameters are voltage range, step size, VREF step
time, VREF full step time, and VREF valid level. The voltage operating range specifies the
minimum required VREF setting range for DDR4 SDRAM devices. The minimum range is
defined by VREFDQ,min and VREFDQ,max. As noted, a calibration sequence, determined by
the DRAM controller, should be performed to adjust VREFDQ and optimize the timing
and voltage margin of the DRAM data input receivers. The internal VREFDQ voltage value
may not be exactly within the voltage range setting coupled with the VREF set tolerance;
the device must be calibrated to the correct internal VREFDQ voltage.
Figure 62: VREFDQ Voltage Range
VDDQ
VREF
range
VREF,max
VREF,min
VSWING small
VSWING large
System variance
Total range
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4gb_ddr4_dram.pdf - Rev. G 1/17 EN
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