PIC16LF1946_13 Datasheet, PDF (401/478 Pages) Microchip Technology – 64-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt XLP Technology

PIC16(L)F1946/47
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym.
Characteristic
Program Memory
Programming Specifications
D110 VIHH Voltage on MCLR/VPP pin
D111 IDDP Supply Current during
Programming
D112 VPBE VDD for Bulk Erase
D113 VPEW VDD for Write or Row Erase
Min.
Typ† Max. Units
Conditions
8.0
—
2.7
VDDMIN
—
9.0
V (Note 3, Note 4)
—
10
mA
—
VDDMAX V
—
VDDMAX V
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
—
1.0
mA
D115 IDDPGM Current on VDD during Erase/Write
—
5.0
mA
Data EEPROM Memory
D116 ED Byte Endurance
100K
—
— E/W -40C to +85C
D117 VDRW VDD for Read/Write
VDDMIN
—
VDDMAX V
D118 TDEW Erase/Write Cycle Time
—
4.0
5.0 ms
D119 TRETD Characteristic Retention
—
40
— Year -40°C to +55°C
Provided no other
specifications are violated
D120 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M
10M
— E/W -40°C to +85°C
Program Flash Memory
D121 EP
Cell Endurance
10K
—
— E/W -40C to +85C (Note 1)
D122 VPRW VDD for Read/Write
VDDMIN
—
VDDMAX V
D123 TIW Self-timed Write Cycle Time
—
2
2.5 ms
D124 TRETD Characteristic Retention
—
40
— Year Provided no other
specifications are violated
†
Note 1:
2:
3:
4:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB™ ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage
must be placed between the MPLAB ICD 2 and target system when programming or debugging with the
MPLAB ICD 2.
 2010-2012 Microchip Technology Inc.
DS41414D-page 401