PIC16F684T-E Datasheet, PDF (131/192 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F684
15.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings^(†)
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +6.5V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)
Total power dissipation⁽¹⁾ ............................................................................................................................... 800 mW
Maximum current out of VSS pin ...................................................................................................................... 95 mA
Maximum current into VDD pin ......................................................................................................................... 95 mA
Input clamp current, IIK (VI < 0 or VI > VDD)...............................................................................................................± 20 mA
Output clamp current, IOK (Vo < 0 or Vo >VDD).........................................................................................................± 20 mA
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTC (combined) ........................................................................... 90 mA
Maximum current sourced PORTA and PORTC (combined) ........................................................................... 90 mA
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.
© 2007 Microchip Technology Inc.
DS41202F-page 129