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| MAX13101E Datasheet, PDF (2/18 Pages) Maxim Integrated Products – 16-Channel Buffered CMOS Logic-Level Translators | |||
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16-Channel Buffered CMOS
Logic-Level Translators
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
VCC ...........................................................................-0.3V to +6V
VL...........................................................................................-0.3V to +6V
I/O VCC_......................................................-0.3V to (VCC + 0.3V)
I/O VL_ .....................................................................-0.3V to (VL + 0.3V)
EN, MULT .................................................................-0.3V to +6V
Short-Circuit Duration I/O VL_, I/O VCC_ to GND .......Continuous
Continuous Power Dissipation (TA = +70°C)
36-Bump WLP (derate 17.0mW/°C above +70°C).....1361mW
40-Pin TQFN (derate 35.7mW/°C above +70°C) .......2857mW
Operating Temperature Range ...........................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to VCC, EN = VL (MAX13101E/MAX13102E/MAX13103E), MULT = VL or GND (MAX13108E),
TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +1.65V, VL = +1.2V, TA = +25°C.) (Notes 1, 2)
PARAMETER
POWER SUPPLIES
VL Supply Range
VCC Supply Range
Supply Current from VCC
SYMBOL
CONDITIONS
VL
VCC
IQVCC
I/O VCC_ = GND, I/O VL _ = GND
or I/O VCC_ = VCC, I/O VL _ = VL,
EN = VL, MULT = GND or VL
MIN TYP MAX UNITS
1.2
1.65
VCC
V
5.50
V
0.03
10
µA
Supply Current from VL
IQVL
I/O VCC_ = GND, I/O VL _ = GND
or I/O VCC_ = VCC, I/O VL _ = VL,
EN = VL, MULT = GND or VL
0.03
20
µA
VCC Shutdown Supply Current
TA = +25°C, EN = GND, I/O VCC_ = GND,
ISHDN-VCC I/O VL _ = GND,
MAX13101E/MAX13102E/MAX13103E
0.03
1
µA
VL Shutdown Supply Current
ISHDN-VL
TA = +25°C, EN = GND, I/O VCC_ = GND,
I/O VL _ = GND,
MAX13101E/MAX13102E/MAX13103E
0.03
2
µA
I/O VCC_ Tri-State Output
Leakage Current
TA = +25°C, EN = GND,
MAX13102E/MAX13103E
TA = +25°C, MULT = GND (I/O VCC1 - I/O VCC 8)
or MULT = VL (I/O VCC 9 - I/O VCC 16)
MAX13108E
0.02
1
µA
0.02
1
I/O VL _ Tri-State Output Leakage
Current
TA = +25°C, EN = GND, MAX13101E/
MAX13103E
TA = +25°C, MULT = GND (I/O VL1 - I/O
VL8) or MULT = VL (I/OVL9 - I/O VL16)
MAX13108E
0.02
1
µA
0.02
1
I/O VL _ Pulldown Resistance
During Shutdown
EN = GND, MAX13102E
4
10
kΩ
2 _______________________________________________________________________________________
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