1032E1111 Datasheet, PDF (3/16 Pages) Lattice Semiconductor – High-Density Programmable Logic

Specifications ispLSI and pLSI 1032E
Absolute Maximum Ratings ¹
Supply Voltage V_cc .................................. -0.5 to +7.0V
Input Voltage Applied ........................ -2.5 to V_CC +1.0V
Off-State Output Voltage Applied ..... -2.5 to V_CC +1.0V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T_J) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specifica tion
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
SYMBOL
VCC
VIL
VIH
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
Commercial _{TA = 0°C to + 70°C}
Industrial
T_A = -40°C to + 85°C
Capacitance (T_A=25^oC, f=1.0 MHz)
MIN.
4.75
4.5
0
2.0
MAX. UNITS
5.25
V
5.5
V
0.8
V
V_cc+1
V
Table 2-0005/1032E
SYMBOL
PARAMETER
C₁
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
C₂
Y0 Clock Capacitance
Data Retention Specifications
TYPICAL
8
UNITS
pf
TEST CONDITIONS
V_CC = 5.0V, V_PIN = 2.0V
15
pf
V_CC = 5.0V, V_PIN = 2.0V
Table 2-0006/1032E
PARAMETER
Data Retention
ispLSI Erase/Reprogram Cycles
pLSI Erase/Reprogram Cycles
MINIMUM
20
10000
100
MAXIMUM
–
–
–
UNITS
Years
Cycles
Cycles
Table 2-0008/1032E
3