W9082B Datasheet, PDF (11/19 Pages) Keysight Technologies – X-Series Measurement Application

11 | Keysight | LTE and LTE-Advanced FDD/TDD X-Series Measurement Application - Technical Overview
Measurement Summary (continued)
UE measurements
Technology
Model-Option
Modulation quality (error summary trace)
– EVM (RMS, peak, data, RS)
– Frequency error
– Common tracking error
– Symbol clock error
– Time offset
– IQ (offset, gain imbalance, quad error, timing skew)
– Channel power
– In-band emissions result without carrier aggregation
– In-band emissions result with carrier aggregation
– Spectral latness result
Conformance EVM
In-band emissions without carrier aggregation
In-band emissions with carrier aggregation
Spectrum latness (eq. ch freq response per slot)
Demodulated error traces
– EVM vs. frequency (sub-carrier)
– EVM vs. time (symbol)
– EVM vs. resource block
– EVM vs. slot
– IQ offset per slot
– Frequency error per slot
– Power vs. resource block
– Power vs. slot
Symbols table
– Numerical values of demodulated symbols (encoded)
Decoded symbol table
– Numerical values of demodulated data and descrambled
data for PUSCH
Frame summary table
– EVM, power, modulation format and number of allocated
RB for all active channels and signals
Detected allocations trace (resource block vs. symbol)
Response
– Equalizer channel frequency response
– Instantaneous equalizer channel frequency response
– Equalizer channel frequency response difference
– Instantaneous equalizer channel frequency response
difference
– Equalizer impulse response
– Equalizer channel frequency response per slot
Channel power
ACP
Transmit on/off power
Spectrum emission mask (SEM)
Spurious emissions
Occupied bandwidth
CCDF
Monitor spectrum
I/Q waveform
LTE FDD
N9080B/
W9080B-1FP
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LTE-Advanced FDD
N9080B/
W9080B-2FP
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LTE TDD
N9082B/
W9082B-1FP
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LTE-Advanced TDD
N9082B/
W9082B-2FP
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