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IS61WV3216DALL Datasheet, PDF (7/20 Pages) Integrated Silicon Solution, Inc – 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM | |||
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IS61WV3216DALL/DALS, IS61WV3216DBLL/DBLS,
IS64WV3216DBLL/DBLS
HIGH SPEED (IS61WV3216DALL/DBLL)
OPERATING RANGE (Vdd) (IS61WV3216DALL)
1
Range
Ambient Temperature
Vdd
Speed
Commercial
0°C to +70°C
1.65V-2.2V
20ns
Industrial
â40°C to +85°C
1.65V-2.2V
20ns
2
Automotive â40°C to +125°C
1.65V-2.2V
20ns
OPERATING RANGE (Vdd) (IS61WV3216DBLL)(1)
3
Range
Ambient Temperature
Vdd (8 ns)1
Vdd (10 ns)1
Commercial
0°C to +70°C
3.3V + 5%
2.4V-3.6V
Industrial
â40°C to +85°C
3.3V + 5%
2.4V-3.6V
4
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range
of 3.3V + 5%, the device meets 8ns.
5
OPERATING RANGE (Vdd) (IS64WV3216DBLL)
Range
Ambient Temperature
Vdd (10 ns)
Automotive â40°C to +125°C
2.4V-3.6V
6
7
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Icc Vdd Dynamic Operating Vdd = Max.,
Com.
Supply Current
Iout = 0 mA, f = fmax Ind.
CE = Vil
Auto.(3)
Vin ⥠Vdd â 0.3V, or typ.(2)
Vin ⤠0.4V
Isb2 CMOS Standby
Current (CMOS Inputs)
Vdd = Max.,
CE ⥠Vdd â 0.2V,
Vin ⥠Vdd â 0.2V, or
Vin ⤠0.2V, f = 0
Com.
Ind.
Auto.
typ.(2)
-8
-10
Min. Max. Min. Max.
â 65
â 50
â 70
â 55
ââ
â 65
45 45
-12
Min. Max.
â 45
â 50
â 55
45
â 40
â 40
â 55
â 55
ââ
â 90
44
â 40
â 55
â 90
4
-20
Min. Max. Unit
â 40 mA
â 45
â 50
â 40 µA
â 55
â 90
Note:
1.At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
3. For Automotive grade at 15ns, typ. Icc = 38mA, not 100% tested.
8
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10
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12
Integrated Silicon Solution, Inc. â www.issi.com
7
Rev. A
05/14/2012
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