IS61WV3216DALL Datasheet, PDF (5/20 Pages) Integrated Silicon Solution, Inc – 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV3216DALL/DALS, IS61WV3216DBLL/DBLS,
IS64WV3216DBLL/DBLS
AC TEST CONDITIONS
Parameter

Unit
(2.4V-3.6V)
Unit
(3.3V + 5%)
1
Unit
(1.65V-2.2V)
Input Pulse Level
Input Rise and Fall Times
0.4V to Vdd - 0.3V
1V/ ns
0.4V to Vdd - 0.3V
1V/ ns
0.4V to Vdd - 0.3V
1V/ ns
2
Input and Output Timing
VDD /2
VDD+ 0.05
0.9V
and Reference Level (VRef) 2
Output Load
See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2
3
R1 ( Ω )
1909
317
13500
R2 ( Ω )
1105
351
10800
Vtm (V)
3.0V
3.3V
1.8V
4
AC TEST LOADS
OUTPUT
ZO = 50Ω
50Ω
VDD/2
30 pF
Including
jig and
scope
Figure 1.
5
R1
VTM
6
OUTPUT
5 pF
Including
jig and
scope
R2
7
Figure 2.
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev. A
05/14/2012