IS61WV3216DALL Datasheet, PDF (17/20 Pages) Integrated Silicon Solution, Inc – 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV3216DALL/DALS, IS61WV3216DBLL/DBLS,
IS64WV3216DBLL/DBLS
LOW POWER (IS61WV3216DALS/DBLS)
1
DATA RETENTION SWITCHING CHARACTERISTICS  (2.4V-3.6V)
Symbol Parameter
Test Condition
Options
Min.
Typ.⁽¹⁾ Max. Unit
Vdr
Vdd for Data Retention
See Data Retention Waveform
Idr
Data Retention Current
Vdd = 2.0V, CE ≥ Vdd – 0.2V
Com.
2.0
—
—
3.6 V
4
40 µA
2
Ind.
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
—
—
50
75
0
—
— ns
3
trc
—
— ns
Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
4
DATA RETENTION SWITCHING CHARACTERISTICS  (1.65V-2.2V)
Symbol
Vdr
Parameter
Vdd for Data Retention
Test Condition
See Data Retention Waveform
Options
Min.
Typ.⁽¹⁾ Max. Unit
1.2
—
3.6 V
5
Idr
Data Retention Current
Vdd = 1.2V, CE ≥ Vdd – 0.2V
Com.
—
4
40 µA
Ind.
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
—
—
50
—
—
75
6
0
—
— ns
trdr
Recovery Time
See Data Retention Waveform
trc
—
— ns
Note 1: Typical values are measured at Vdd = 1.8V, Ta = 25^oC and not 100% tested.
7
8
DATA RETENTION WAVEFORM (CE Controlled)
9
tSDR
Data Retention Mode
tRDR
VDD
10
VDR
11
CE
GND
CE ≥ VDD - 0.2V
12
Integrated Silicon Solution, Inc. — www.issi.com
17
Rev. A
05/14/2012