IS61WV3216DALL Datasheet, PDF (16/20 Pages) Integrated Silicon Solution, Inc – 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV3216DALL/DALS, IS61WV3216DBLL/DBLS,
IS64WV3216DBLL/DBLS
HIGH SPEED (IS61WV3216DALL/DBLL)
DATA RETENTION SWITCHING CHARACTERISTICS  (2.4V-3.6V)
Symbol Parameter
Test Condition
Options
Min.
Vdr
Vdd for Data Retention
See Data Retention Waveform
2.0
Idr
Data Retention Current
Vdd = 2.0V, CE ≥ Vdd – 0.2V
Com.
—
Ind.
—
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
0
trdr
Recovery Time
See Data Retention Waveform
trc
Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Typ.⁽¹⁾
—
4
—
—
—
Max. Unit
3.6 V
40 µA
55
90
— ns
— ns
DATA RETENTION SWITCHING CHARACTERISTICS  (1.65V-2.2V)
Symbol Parameter
Test Condition
Options
Min.
Vdr
Vdd for Data Retention
See Data Retention Waveform
1.2
Idr
Data Retention Current
Vdd = 1.2V, CE ≥ Vdd – 0.2V
Com.
—
Ind.
—
Auto.
—
tsdr
Data Retention Setup Time See Data Retention Waveform
0
trdr
Recovery Time
See Data Retention Waveform
trc
Note 1: Typical values are measured at Vdd = 1.8V, Ta = 25^oC and not 100% tested.
Typ.⁽¹⁾
—
4
—
—
—
—
Max. Unit
3.6 V
40 µA
55
90
— ns
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
16
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
05/14/2012