IS61WV5128ALL Datasheet, PDF (6/25 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
HIGH SPEED (IS61WV5128ALL/BLL)
OPERATING RANGE (Vdd) (IS61WV5128ALL)
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Automotive –40°C to +125°C
Vdd
1.65V-2.2V
1.65V-2.2V
1.65V-2.2V
Speed
20ns
20ns
20ns
OPERATING RANGE (Vdd) (IS61WV5128BLL)⁽¹⁾
Range
Ambient Temperature
Vdd (8 ns)¹
Vdd (10 ns)¹
Commercial
0°C to +70°C
3.3V + 5%
2.4V-3.6V
Industrial
–40°C to +85°C
3.3V + 5%
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%,
the device meets 8ns.
OPERATING RANGE (Vdd) (IS64WV5128BLL)
Range
Ambient Temperature
Automotive –40°C to +125°C
Vdd (10 ns)
2.4V-3.6V
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-8
Symbol Parameter
Test Conditions Min. Max.
Icc
Vdd Dynamic Operating Vdd = Max.,

Supply Current
Iout = 0 mA, f = fmax


Com. — 50
Ind. — 55
Auto. — —
typ.⁽²⁾
Icc1
Operating
Vdd = Max.,

Supply Current
Iout = 0 mA, f = 0

Com. — 35
Ind. — 40
Auto. — —
Isb1
TTL Standby Current

(TTL Inputs)

Vdd = Max.,
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com. — 10
Ind. — 15
Auto. — —
Isb2
CMOS Standby

Current (CMOS Inputs)


Vdd = Max.,
CE ≥ Vdd – 0.2V,
Vin ≥ Vdd – 0.2V, or
Vin ≤ 0.2V, f = 0
Com. — 7
Ind. — 10
Auto. — —
typ.⁽²⁾
-10
Min. Max.
— 40
— 45
— 65
25
— 35
— 40
— 60
— 10
— 15
— 30
—7
— 10
— 20
2
-20
Min. Max. Unit
— 40 mA
— 45
— 65
— 30 mA
— 40
— 60
— 10 mA
— 15
— 30
—7
mA
— 10
— 20
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  I
08/10/09