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IS61WV5128ALL Datasheet, PDF (4/25 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM | |||
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IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 3.3V + 5%
Symbol Parameter
Test Conditions
Voh
Output HIGH Voltage
Vdd = Min., Ioh = â4.0 mA
Vol
Output LOW Voltage
Vdd = Min., Iol = 8.0 mA
Vih
Input HIGH Voltage
Vil
Input LOW Voltage(1)
Ili
Input Leakage
GND ⤠Vin ⤠Vdd
Ilo
Output Leakage
GND ⤠Vout ⤠Vdd, Outputs Disabled
Note:
1. Vil (min.) = â0.3V DC; Vil (min.) = â2.0V AC (pulse width <10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested.
Min.
Max.
Unit
2.4
â
V
â
0.4
V
2
Vdd + 0.3
V
â0.3
0.8
V
â1
1
µA
â1
1
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.4V-3.6V
Symbol Parameter
Test Conditions
Voh
Output HIGH Voltage
Vdd = Min., Ioh = â1.0 mA
Vol
Output LOW Voltage
Vdd = Min., Iol = 1.0 mA
Vih
Input HIGH Voltage
Vil
Input LOW Voltage(1)
Ili
Input Leakage
GND ⤠Vin ⤠Vdd
Ilo
Output Leakage
GND ⤠Vout ⤠Vdd, Outputs Disabled
Note:
1. Vil (min.) = â0.3V DC; Vil (min.) = â2.0V AC (pulse width <10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested.
Min.
Max.
Unit
1.8
â
V
â
0.4
V
2.0 Vdd + 0.3 V
â0.3
0.8
V
â1
1
µA
â1
1
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 1.65V-2.2V
Symbol Parameter
Test Conditions
Voh
Output HIGH Voltage
Vdd = Min, Ioh = -0.1 mA
Vol
Output LOW Voltage
Vdd = Min, Iol = 0.1 mA
Vih
Input HIGH Voltage
Vil(1)
Input LOW Voltage
Ili
Input Leakage
GND ⤠Vin ⤠Vdd
Ilo
Output Leakage
GND ⤠Vout ⤠Vdd, Outputs Disabled
Note:
1. Vil (min.) = â0.3V DC; Vil (min.) = â2.0V AC (pulse width <10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested.
Min.
1.4
â
1.4
â0.2
â1
â1
Max.
â
0.2
Vdd + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
4
Integrated Silicon Solution, Inc. â www.issi.com
Rev.â I
08/10/09
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