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IS61WV5128ALL Datasheet, PDF (16/25 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM | |||
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IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
HIGH SPEED (IS61WV5128ALL/BLL)
DATA RETENTION SWITCHING CHARACTERISTICSâ (2.4V-3.6V)
Symbol Parameter
Test Condition
Options
Min.
Typ.(1)
Vdr
Vdd for Data Retention
See Data Retention Waveform
2.0
â
Idr
Data Retention Current
Vdd = 2.0V, CE ⥠Vdd â 0.2V
Com.
â
2
Ind.
â
â
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
0
â
trdr
Recovery Time
See Data Retention Waveform
trc
â
Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
Max. Unit
3.6 V
6 mA
8
15
â ns
â ns
DATA RETENTION SWITCHING CHARACTERISTICSâ (1.65V-2.2V)
Symbol Parameter
Test Condition
Options
Min.
Vdr
Vdd for Data Retention
See Data Retention Waveform
1.2
Idr
Data Retention Current
Vdd = 1.2V, CE ⥠Vdd â 0.2V
Com.
â
Ind.
â
tsdr
Data Retention Setup Time See Data Retention Waveform
0
trdr
Recovery Time
See Data Retention Waveform
trc
Note 1: Typical values are measured at Vdd = 1.8V, Ta = 25oC and not 100% tested.
Typ.(1)
â
2
â
â
â
Max. Unit
3.6 V
6 mA
8
â ns
â ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ⥠VDD - 0.2V
16
Integrated Silicon Solution, Inc. â www.issi.com
Rev.â I
08/10/09
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